Pob zeb diamond thiab dav -bandgap Cov ntaub ntawv ua rau Kev Tshawb Fawb Kev Tshawb Fawb hauv Hluav Taws Xob

Kev loj hlob sai ntawm cov tsheb hluav taws xob (EVs) tau tsim cov kev xav tau ntau dua ntawm cov hluav taws xob hluav taws xob hloov hluav taws xob: kev ua tau zoo, kev cog lus, thiab kev ntseeg tau. Ib txwm silicon (Si)-raws li cov khoom siv semiconductors tau mus txog lawv qhov kev txwv theoretical, thaum lub dav bandgap (WBG) thiab ultra-wide bandgap (UWBG) semiconductor cov ntaub ntawv tau tshwm sim tom ntej - cov kev daws teeb meem.

 

Tsab ntawv xov xwm no feem ntau tsom mus rau qhov kev nce qib tshiab tshaj plaws ntawm qhov dav -bandgap semiconductor li hauv lub tsheb hluav taws xob hloov hluav taws xob, nrog rau hauv - tsom xam qhov tob ntawm cov yam ntxwv, kev tsim cov nyom, thiab cov cuab yeej ua haujlwm ntawm silicon carbide (SiC), gallium nitride (GaN), nrog rau cov ntaub ntawv tawm tshiab xws li pob zeb diamond thiab gallium oxide (GaN). Nws kuj tseem tshuaj xyuas qhov siv tau ntawm cov ntaub ntawv no hauv cov tshuab EV tseem ceeb xws li traction inverters, onboard chargers (OBCs), thiab DC-DC converters, thaum tham txog lawv cov kev loj hlob, kev tshawb fawb tsis sib haum, thiab yav tom ntej tiam sis los tshawb txog lub peev xwm ntawm dav -bandgap technology hauv hluav taws xob mus.

Cov yam ntxwv ntawm cov khoom siv dav -bandgap semiconductors

Lub hauv paus ntawm lub zog hloov dua siab tshiab hauv tsheb hluav taws xob yog lub zog hluav taws xob hloov hluav taws xob, uas nws qhov kev ua tau zoo nyob ntawm cov khoom siv hluav taws xob hloov hluav taws xob. Silicon, nrog nws qhov nqaim bandgap (1.12 eV), muaj kev txwv nyob rau hauv high voltage, siab kub, thiab siab - zaus ua haujlwm, ua rau nws nyuaj zuj zus kom ua tau raws li qhov xav tau ntawm tom ntej - tiam siab - ntom, siab - efficiency EV fais fab tshuab.

 

Wide bandgap semiconductors feem ntau muaj bandgaps tshaj 2 eV, muaj ntau dua kev puas tsuaj hluav taws xob, qis dua - xeev tsis kam, thiab thermal conductivity zoo heev.

 

Cov khoom tseem ceeb muaj xws li:

 

Silicon carbide (SiC)

Qhov dav dav tshaj plaws -bandgap thev naus laus zis nta qhov bandgap ntawm 3.26 eV, tawg hluav taws xob ntawm 3-5 MV / cm, thiab thermal conductivity ntawm 3.0–4.9 W / cm·K (kwv yees li peb npaug ntawm silicon). 4H-SiC 5 yog cov khoom siv hluav taws xob ntau lawm, thiab cov khoom siv hluav taws xob 1 mm. 200 hli wafers ze rau kev lag luam. SiC MOSFETs ua tau zoo nyob rau hauv siab -voltage systems saum toj no 800 V, txo cov conduction thiab switching losses, txhim kho inverter efficiency los ntawm ob peb feem pua, thiab ncua tsheb ntau yam. Qhov kev sib tw tseem ceeb yog nyob rau hauv qhov kev sib txuas siab siab ntawm SiC / SiO₂, tab sis cov txheej txheem zoo li nitrogen passivation tau txhim kho kev ntseeg tau zoo. Nyob rau hauv qis- qhov kub thiab txias (cryogenic) ib puag ncig, qhov ntawm - tsis kam thiab hloov qhov poob ntawm siab -voltage SiC cov cuab yeej nce siab, ua rau lawv tsis tsim nyog rau kev siv kub tsawg heev -.

 

Gallium Nitride (GN)

Nrog lub bandgap ntawm 3.4 eV, ob lub -dimensional electron gas (2DEG) tsim los ntawm AlGaN/GaN heterojunction muaj ib tug electron txav mus txog 2000 cm ² / V · s, tsis tshua muaj siab tsis kam, thiab ib tug switching zaus ntawm mus txog rau MHz. GaN muaj qhov zoo tshaj plaws nyob rau hauv siab - zaus thiab nruab nrab voltage (<650 V) applications, which can significantly reduce the volume and weight of passive components in car chargers and DC-DC converters. At low temperatures, the performance of GaN is actually improved, with reduced on resistance and faster switching speed, making it very suitable for extreme environments. However, GaN lacks inexpensive intrinsic substrates and is often grown epitaxially on silicon, resulting in lattice mismatch and defect issues; The manufacturing of enhanced (normally off) devices is also more complex.

 

pob zeb diamond

Ultra wide bandgap (5.47 eV), theoretical breakdown hluav taws xob teb ntawm 20 MV / cm, thermal conductivity ntawm 22 W / cm · K (ntau tshaj 5 npaug ntawm SiC), theoretical kev kawm deb tshaj lwm yam ntaub ntawv, thiab ze li ntawm 10 kV Schottky diodes thiab tsis tshua muaj siab Baliga tsim nyog tus nqi tau tshaj tawm. Txawm li cas los xij, n- hom doping yog qhov nyuaj thiab tus nqi substrate yog siab. Kev lag luam ntawm cov khoom siv hluav taws xob pob zeb diamond yuav siv sij hawm, tab sis lawv lub peev xwm nyob rau hauv ultra- high voltage thiab high kub daim ntawv thov yog unparalleled.

 

- Gallium oxide (Ga ₂ O ∝)

Nrog lub bandgap ntawm 4.5-4.9 eV thiab tawg hluav taws xob teb ntawm 8 MV / cm, loj- loj ib qho siv lead ua substrates tuaj yeem loj hlob los ntawm txoj kev yaj (xws li Czochralski) nrog cov nqi tsim khoom tsawg. Lub ntsiab drawback yog tsis tshua muaj thermal conductivity (0.1-0.3 W / cm · K), yuav tsum tau ua kom txias txias; P-hom doping yog qhov nyuaj, thiab cov khoom siv feem ntau yog unipolar. Haum rau yav tom ntej ultra-high voltage daim ntaub ntawv.

 

Kev sib piv ntawm cov khoom siv thiab tsim nyog rau kev siv EV

Cov yam ntxwv ntawm cov ntaub ntawv sib txawv txiav txim siab lawv qhov kev pom zoo ntawm daim ntawv thov nyob rau hauv ntau lub subsystems ntawm EV:

• Traction inverter (siab voltage, 800V + system)
• SiC yog qhov zoo tshaj plaws. Kev muaj peev xwm muaj peev xwm siab, siab thermal conductivity, thiab cov cua txias yooj yim tau hloov pauv silicon IGBTs, txhim kho kev ua haujlwm thiab txuas ntxiv roj teeb lub neej.
• Tsheb charger (OBC) thiab DC -DC converter
• GaN yog qhov zoo tshaj plaws. Kev ua haujlwm ntau zaus txo qhov ntim ntawm cov khoom siv tsis zoo, ua tiav lub zog ceev ntawm 3-5 kW / L lossis siab dua, txo cov tsheb hnyav thiab txo cov nqi.
• Kev them nyiaj wireless (WPT)
• GaN lub siab - tus yam ntxwv zaus ib txwm hloov mus rau resonant converters xws li ntau pua kHz mus rau MHz.
• Ultra high voltage yav tom ntej scenarios (xws li hnyav- tsheb thauj khoom, fais fab kev sib tshuam)
• Pob zeb diamond thiab Ga ₂ O3 muaj lub peev xwm loj tshaj plaws los ua kom yooj yim topology thiab txo cov khoom siv sib txuas.
• Hais txog qhov qis- qhov kub thiab txias, GaN thiab silicon muaj kev ua tau zoo heev, thaum siab -voltage SiC kev ua haujlwm poob qis, thiab ceev faj xaiv yuav tsum tau ua raws li qhov kev thov scenario.

 

Muaj peev xwm Daim Ntawv Thov thiab Engineering Prospects ntawm Pob Zeb Diamond hauv Kev Siv Hluav Taws Xob EV

Pob zeb diamond tau suav tias yog cov khoom siv tiam tom ntej tshaj SiC / GaN vim nws qhov dav dav bandgap thiab thermal conductivity siab heev. Cov teeb meem tseem ceeb yog qhov nyuaj ntawm n- hom doping (phosphorus / nitrogen sib sib zog nqus theem, qis chav kub ua kom tus nqi) thiab tus nqi siab ntawm cov loj - qhov loj ntawm ib qho siv lead ua substrates, tab sis tsis ntev los no kev nce qib tseem ceeb.

 

Nyiv Lub Hwj Chim Pob Zeb Diamond Systems (PDS) nthuav tawm tiag tiag- lub sijhawm ua haujlwm pob zeb diamond fais fab MOSFET cov qauv ntawm SEMICON Nyiv 2025, nrog rau kev npaj xa cov qauv rau EV inverters thiab satellites hauv xyoo 2026.

Fab Kis Diamfab nce qib 4-nti hluavtaws pob zeb diamond wafers los tsim lub European pob zeb diamond ecosystem, tsom rau lub hwj chim hluav taws xob, nrog rau kev tsim qauv tsim los ntawm 2026.

Lub Pob Zeb Diamond Foundry Perseus qauv (2023) muaj qhov ua qauv qhia ntim rau lub sijhawm me me thiab siab zog dua li Tesla Model 3 inverter.

Muaj peev xwm rau EV system kev koom ua ke

Lub siab tawg lub zog ntawm pob zeb diamond ua rau nws ncaj qha cuam tshuam nrog siab -voltage systems, simplifying lub topology ntawm lub hwj chim converters thiab txo tus naj npawb ntawm cov khoom siv. Tsis tas li ntawd, lub ultra-siab thermal conductivity ntawm pob zeb diamond ua kom yooj yim rau lub tshuab ua kom txias, ua kom muaj zog ntau dua (ntau zaus siab dua li SiC tam sim no). Pob zeb diamond muaj peev xwm siv dav hauv ultra-high voltage traction inverters, ultra compact car chargers, thiab high-temperature tolerant systems.

 

Thermal Management thiab Reliability

Lub ultra-siab thermal conductivity ntawm pob zeb diamond ua rau nws tshwj xeeb tshaj yog haum rau siab - fais fab EV systems, ua kom muaj cua sov dissipation yam tsis tas yuav ua kom txias txias. Pob zeb diamond ua tau zoo dua SiC thiab GaN nyob rau hauv qhov kub thiab txias ib puag ncig.

 

Cov ntsiab lus thiab Kev Pom Zoo

Wide bandgap semiconductors tau hloov kho lub zog hluav taws xob hluav taws xob toj roob hauv pes ntawm hluav taws xob tsheb. SiC dominates siab-voltage traction inverters, GaN ua rau siab - zaus thiab siab- cov ntawv thov ceev, thaum pob zeb diamond thiab Ga ₂ O3 sawv cev rau yav tom ntej kev coj ntawm ultra-high voltage thiab huab ib puag ncig. Kev xaiv cov ntaub ntawv yuav tsum ua tib zoo xav txog qib voltage, hloov zaus, tswj thermal, thiab nqi.

 

Cov teeb meem tseem ceeb tam sim no suav nrog: SiC interface optimization, GaN siab -voltage kev ntseeg tau, thiab doping thiab substrate teeb meem ntawm pob zeb diamond / Ga ₂ O3. Nrog rau kev loj hlob ntawm cov txheej txheem tsim khoom, cov cuab yeej siv dav dav yuav ntxiv dag zog rau kev ua tau zoo, ntau yam, thiab kev them nqi hluav taws xob ceev, thaum txhawb nqa kev tsim kho tshiab hauv hluav taws xob hluav taws xob hauv thaj chaw hluav taws xob, kev lag luam, thiab aviation.